| PART |
Description |
Maker |
| FLM1415-3F |
Internally Matched Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLM5964-6D |
Internally Matched Power GaAs FETs
|
Fujitsu
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFC38V5964 MGFC38V596411 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V5258 MGFC39V525811 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC47B3538B |
C band Internally Matched Power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V4450A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC42V7177 |
C band Internally Matched Power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| TIM1213-4L |
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
